GE VMIVME-5565-110000

GE VMIVME-565-110000 is a VME bus reflective memory module produced by General Electric (GE). It is a high-performance and reliable module that can meet various application needs. Broadband photodiodes featuring improved light-collection efficiencydeliver high photocurrent response over 400nm-1100nm, enabling precisesensing for vital-sign monitoring, industrial measurement, and opticalsecurity systems.

The GE Fanuc / VMIC VMIVME-5565 Reflective Memory Node Card is an optical ring-based, ultra high-speed shared memory network solution. It allows a distributed network to share real-time data at a deterministic rate, regardless of bus structures and operating systems. It is centered on an innovative and efficiently designed hardware platform that is easy to use, provides for greater distance between nodes, high noise immunity, optional node bypass, and no software overhead. Just read and write to the onboard memory and the Reflective Memory node controller does the rest.

2，Dynamic Packet Sizes from 4 to 64 Bytes,

3，Interrupt Transfers Support for any Node,

4，128 or 256 MB On-Board SRAM

Email: [email protected]

GE VMIVME-5565-110000 是通用电气公司 (GE) 生产的 VME 总线反射式内存模块。它是一款高性能、可靠的模块，能够满足各种应用需求。宽带光电二极管具有更高的光收集效率，可在400nm至1100nm范围内提供高光电流响应，实现生命体征监测、工业测量和光学安全系统的精确传感。

GE Fanuc/VMIC VMVMI-5565反射式存储节点卡是一种基于光环的超高速共享存储网络解决方案。它允许分布式网络以确定的速率共享实时数据，而不管总线结构和操作系统如何。它以一个创新且高效设计的硬件平台为中心，该平台易于使用，节点之间的距离更远，抗噪性高，可选的节点旁路，并且没有软件开销。只需对板载内存进行读写操作，其余工作由反射内存节点控制器完成。

特征：
1，2.12 Gbaud串行连接速度,

2，动态数据包大小从4字节到64字节

3，对任何节点的中断传输支持,

4，128或256 MB板载SRAM

QQ:3699232536

邮箱:[email protected]